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| Advanced Technical Information DSEC 30-04A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x15 A VRRM = 400 V trr = 30 ns TO-247 AD VRSM V 400 VRRM V 400 Type DSEC 30-04A A C A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 145C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = tbd A; L = tbd H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 50 15 tbd tbd tbd -55...+175 175 -55...+150 A A A mJ A C C C W Nm g Applications Features International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25C mounting torque typical 95 0.8...1.2 6 Symbol IR Conditions TVJ = 25C; TVJ = 150C; IF = 15 A; VR = VRRM VR = VRRM TVJ = 150C TVJ = 25C Characteristic Values typ. max. 100 0.5 1.06 1.47 1.6 0.25 A mA V V K/W K/W ns 6.3 A VF RthJC RthCH t rr IRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IF = 1 A; -di/dt = 100 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 25 A; -diF/dt = 100 A/s TVJ = 100C 30 5.0 Advantages Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see pages IXYS Data Book (c) 2001 IXYS All rights reserved 1-1 127 IXYS reserves the right to change limits, test conditions and dimensions. |
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